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Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 679-682

Enhanced channel mobility in 4H-SiC MISFETs by utilizing deposited SiN/SiO2 stack gate structures

(3) Noborio, Masato a Suda, Jun a Kimoto, Tsunenobu a

a KYOTO UNIVERSITY (Japan)

Author keywords

Channel mobility; Deposited insulator; Interface state density; MIS; MOSFET; Silicon nitride (SiN)

Indexed keywords

ANNEALING; CAPACITANCE; INTERFACE STATES; LOGIC GATES; MOSFET DEVICES; SILICON CARBIDE;

CHANNEL MOBILITY; DEPOSITED INSULATOR; INTERFACE QUALITY; INTERFACE STATE DENSITY; MOS INTERFACE; MOS-FET; MOSFETS; SILICON NITRIDE; STACK GATE; STACK GATE STRUCTURE;

SILICON NITRIDE;

EID: 63849291195 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.600-603.679 Document Type: Conference Paper

Times cited : (8)

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