9 kV 4H-SiC IGBTs with 88 mΩ⋅cm2 of Rdiff, on

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 771-774

  Zhang, Qing Chun ^a   Jonas, Charlotte ^a   Heath, Brad ^a   Das, Mrinal ^a   Ryu, Sei Hyung ^a   Agarwal, Anant ^a   Palmour, John ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

High power; Planar gate IGBTs; Power IGBTs

Indexed keywords

HIGH TEMPERATURE APPLICATIONS; HOLE MOBILITY; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); THRESHOLD VOLTAGE;

BLOCKING VOLTAGE; ELEVATED TEMPERATURE; FAST SWITCHING; GATE BIAS; HIGH POWER; HOLE CHANNELS; INDUCTIVE SWITCHING; ON-RESISTANCE;

SILICON CARBIDE;

EID: 37249005843     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.771     Document Type: Conference Paper

References (4)

1. J. Scofield et al.: presented at MRS spring meeting, April 17 - 21, 2006, San Francisco, CA.
2. W. J. Schaffer et al.: Mat. Res. Soc. Symp. Proc. Vol. 339 (1994), p. 595
3. S. Ryu et al.: presented at HiTEC, May 15 - 18, 2006, Santa Fe, NM.
4. A. Agarwal et al.: Silicon Carbide, Recent Major Advances, Springer-Verlag Berlin Heidelberg 2004, Germany, p. 785.