Optimizing the thermally oxidized 4H-SiC MOS interface for P-channel devices

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 667-670

  Das, Mrinal K ^a   Haney, Sarah K ^a   Jonas, Charlotte ^a   Zhang, Qing Chun ^a   Ryu, Sei Hyung ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

IGBT; MOS; MOSFET; Oxidation

Indexed keywords

HOLE MOBILITY; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); INVERSION LAYERS; MOLYBDENUM; MOS DEVICES; MOSFET DEVICES; OXIDATION; TEMPERATURE MEASUREMENT;

ACTIVATION ANNEALING; DIELECTRIC STRENGTHS; HIGH TEMPERATURE MEASUREMENT; LEAKAGE MEASUREMENTS; MOS-FET; OPERATING TEMPERATURE RANGES; P CHANNEL DEVICE; THERMALLY OXIDIZED;

SILICON CARBIDE;

EID: 38449106917     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.667     Document Type: Conference Paper

References (4)

1. S-H Ryu, et al. Material Science Forums, Vol 527-529 (2006) pp. 1261-1264.
2. S-H Ryu, et al. Electron Device Letters, Vol 25, Issue 8, (2004) pp. 556-558.
3. C. Jonas, et al., MRS Spring Meeting 2006.
4. G.Y. Chung, et al., Applied Physics Letters, Vol 76, Number 13, (2000) pp. 1713-1715.