4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 769-772

  Peters, Dethard ^a   Schörner, Reinhold ^a   Friedrichs, Peter ^a   Stephani, Dietrich ^a  

^a SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

4H Silicon Carbide; Channel Mobility; Nitridation; Nitrous Oxide; Power MOSFET

Indexed keywords

ELECTRODES; HYDROGEN; OXIDATION; POLYSILICON; SILICON CARBIDE; SWITCHING; THRESHOLD VOLTAGE;

CHANNEL MOBILITY;

MOSFET DEVICES;

EID: 0242580986     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.769     Document Type: Conference Paper

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