TDDB measurement of gate SiO2 on 4H-SiC formed by chemical vapor deposition

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 799-802

  Fujihira, K ^a   Yoshida, S ^a   Miura, N ^a   Nakao, Y ^a   Imaizumi, M ^a   Takami, T ^a   Oomori, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

CVD oxide; MOS capacitor; Reliability; TDDB; Thermal oxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MOS CAPACITORS; RELIABILITY; SILICA; SILICON OXIDES;

FIELD OXIDES; IMPURITIES IN; ORDERS OF MAGNITUDE; OXIDE AREA; OXIDE BREAKDOWN; TDDB; THERMAL OXIDES; THERMALLY GROWN OXIDE;

SILICON CARBIDE;

EID: 63849096007     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (2)

1. K. Fujihira, N. Miura, K. Shiozawa, M. Imaizumi, K. Ohtsuka and T. Takami: IEEE Electron Device Lett. Vol. 25 (2004), p. 734
2. J. Senzaki, K. Kojima, T. Kato, A. Shimozato and K. Fukuda: Appl. Phys. Lett. Vol. 89 (2006), p. 022909