Characterization of 4H-SiC MOSFETs with NO-annealed CVD oxide

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 971-974

  Yano, H ^a   Hatayama, T ^a   Uraoka, Y ^a   Fuyuki, T ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Channel mobility; CVD oxide; MOS; MOSFET; Nitridation; NO anneal; SIMS

Indexed keywords

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; CONDUCTION BANDS; NITRIDATION; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

CARBON DISTRIBUTION; CHANNEL MOBILITY; NITROGEN CONCENTRATION; THERMAL OXIDES;

MOSFET DEVICES;

EID: 37849049334     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.971     Document Type: Conference Paper

References (4)

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4. S.M. Sze: Physics of Semiconductor Devices. 2nd Edition (Wiley, New York 1981), p. 446