High-voltage self-aligned p-channel DMOS-IGBTs in 4H-SiC

IEEE Electron Device Letters

Volumn 28, Issue 8, 2007, Pages 728-730

  Sui, Y ^a   Wang, X ^a   Cooper, J A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

High temperature; High voltage; Insulated gate bipolar transistors (IGBTs); Power transistors; Silicon carbide; Wide bandgap

Indexed keywords

CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ENERGY GAP; MOSFET DEVICES; SILICON CARBIDE; SWITCHES;

CONDUCTIVITY MODULATION; DRIFT LAYER; POWER TRANSISTOR;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 34547774599     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.901582     Document Type: Article

References (13)

1. 2 4H-SiC Power DMOSFETS," IEEE Electron Device Lett., vol. 25, no. 8, pp. 556-558, Aug. 2004.
2. Y. Sui, T. Tsuji, and J. A. Cooper, "On-state characteristics of SiC power UMOSFETs on 115-μm drift layers," IEEE Electron Device Lett. vol. 26, no. 4, pp. 255-257, Apr. 2005.
3. J. A. Cooper and A. Agarwal, "SiC power-switching devices - The second electronics revolution?" Proc. IEEE, vol. 90, no. 6, pp. 956-968, Jun. 2002.
4. Y. Sui, G. G. Walden, X. Wang, and J. A. Cooper, "Device options and design considerations for high-voltage (10-20 kV) SiC power switching devices," Mater. Sci. Forum, vol. 527-529, pp. 1449-1452, 2006.
5. Q. Zhang, H.-R. Chang, M. Gomez, C. Bui, E. Hanna, J. A. Higgins, T. Isaacs-Smith, and J. R. Williams, "10 kV trench gate IGBTs on 4H-SiC," in Proc. Int. Symp. Power Semicond. Devices and ICs, May 23-26, 2005, pp. 303-306.
6. Q. Zhang, C. Jonas, S.-H. Ryu, A. Agarwal, and J. Palmour, "Design and fabrications of high voltage IGBTs on 4H-SiC," in Proc. Int. Symp. Power Semicond. Devices and ICs, Sep. 2006, pp. 285-288.
7. 2 of R diff," in Proc. 6th ECSCRM, Newcastle Upon Tyne, U.K., Sep. 3-7, 2006.
8. M. Matin, A. Saha, and J. A. Cooper, "A self-aligned process for high-voltage, short-channel vertical DMOSFETs in 4H-SiC," IEEE Trans. Electron Devices, vol. 51, no. 10, pp. 1721-1725, Oct. 2004.
9. 2/4H-SiC interface," IEEE Trans. Electron Devices, vol. 50, no. 7, pp. 1582-1588, Jul. 2003.
10. C. Y. Lu and J. A. Cooper, "A new constant-current technique for MOSFET parameter extraction," Solid State Electron., vol. 49, no. 3, pp. 351-356, Mar. 2005.
11. M. Roschke and F. Schwierz, "Electron mobility models for 4H, 6H, and 3C SiC," IEEE Trans. Electron Devices, vol. 48, no. 7, pp. 1442-1447, Jul. 2001.
12. P. A. Ivanov, M. E. Levinshtein, A. Agarwal, S. Krishnaswami, and J. Palmour, "Temperature dependence of the current gain in power 4H-SiC NPN BJTs," IEEE Trans. Electron Devices, vol. 53, no. 5, pp. 1245-1249, May 2006.
13. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. New York: Wiley, 2007.