Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112̄0) formed by N2O oxidation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 3, 2005, Pages 1213-1218

  Kimoto, Tsunenobu ^a   Kanzaki, Yosuke ^a   Noborio, Masato ^a   Kawano, Hiroaki ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Channel mobility; MOS interface; MOSFET; Non basal plane; Oxidation; Silicon carbide

Indexed keywords

ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); MOSFET DEVICES; NITROGEN OXIDES; OHMIC CONTACTS; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; THRESHOLD VOLTAGE;

CHANNEL MOBILITY; INTERFACE STATE DENSITY; METAL-OXIDE-SEMICONDUCTOR (MOS) INTERFACE; NON-BASAL PLANE;

MOS DEVICES;

EID: 19844374505     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1213     Document Type: Article

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