Lateral RESURF MOSFET fabricated on 4H-SiC (0001̄) C-face

IEEE Electron Device Letters

Volumn 25, Issue 6, 2004, Pages 405-407

  Okamoto, Mitsuo ^a   Suzuki, Seiji ^a   Kato, Makoto ^a   Yatsuo, Tsutomu ^a   Fukuda, Kenji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Carbon face (C face); Metal oxide semiconductor field effect transistors (MOSFETs); Mobility; On resistance; Reduced surface field (RESURF); Silicon carbide (SiC); Temperature dependence

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON MOBILITY; ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS;

CARBON FACE; ON RESISTANCE; REDUCED SURFACE FIELD; TEMPERATURE DEPENDENCE;

MOSFET DEVICES;

EID: 2942718936     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.828970     Document Type: Letter

References (16)

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