1330 V, 67 mΩ · cm2 4H-SiC(0001) RESURF MOSFET

IEEE Electron Device Letters

Volumn 26, Issue 9, 2005, Pages 649-651

  Kimoto, Tsunenobu ^a   Kawano, Hiroaki ^a   Suda, Jun ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Power device; Power MOSFET; Reduced surface field (RESURF); Silicon carbide (SIC)

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; OPTIMIZATION; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

POWER DEVICE; POWER MOSFET; REDUCED SURFACE FIELD (RESURF);

MOSFET DEVICES;

EID: 26444532853     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.854371     Document Type: Article

References (13)

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