Electron transport at the SiC/SiO2 interface

Physica Status Solidi (A) Applied Research

Volumn 162, Issue 1, 1997, Pages 339-368

  Ouisse, T ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; HIGH TEMPERATURE OPERATIONS; INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THERMOELECTRICITY;

THERMALLY ACTIVATED CONDUCTIVITY;

SILICON CARBIDE;

EID: 0031189894     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199707)162:1<339::AID-PSSA339>3.0.CO;2-G     Document Type: Article

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