Electrical properties of Al2O3/4H-SiC structures grown by atomic layer chemical vapor deposition

Journal of Applied Physics

Volumn 102, Issue 5, 2007, Pages

  Avice, Marc ^a   Grossner, Ulrike ^a   Pintilie, Ioana ^a   Svensson, Bengt G ^a   Servidori, Marco ^b   Nipoti, Roberta ^b   Nilsen, Ola ^a   Fjellvg, Helmer ^a  

^a UNIVERSITY OF OSLO   (Norway)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; CONDUCTION BANDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; MEASUREMENT THEORY; MOSFET DEVICES; SILICON CARBIDE;

ELECTRON CHANNEL MOBILITY; FLATBAND VOLTAGE; THERMALLY DIELECTRIC RELAXATION CURRENT;

ALUMINA;

EID: 34548692053     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2778289     Document Type: Article

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