Recent progress of submicron CMOS using 6H-SiC for smart power applications

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 546-554

  Lam, Man Pio ^a   Kornegay, Kevin T ^b  

^a IEEE   (United States)

^b Department of Population Medicine and Diagnostic Sciences   (United States)

Author keywords

High temperature; Mosfet's; Silicon carbide

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRIC SWITCHES; INTEGRATED CIRCUIT MANUFACTURE; LOGIC GATES; MOSFET DEVICES; OSCILLATORS (ELECTRONIC); SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

PARASITIC SERIES RESISTANCE;

CMOS INTEGRATED CIRCUITS;

EID: 0033098345     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748875     Document Type: Article

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