MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with nitrogen

Microelectronic Engineering

Volumn 84, Issue 12, 2007, Pages 2804-2809

  Poggi, A ^a   Moscatelli, F ^a   Hijikata, Y ^a   Solmi, S ^a   Nipoti, R ^a  

^a CNR   (Italy)

Author keywords

Interface states; MOS capacitors; Nitrogen implantation

Indexed keywords

AMORPHIZATION; CAPACITANCE MEASUREMENT; CHARACTERIZATION; CONDUCTION BANDS; NITROGEN; OXIDATION; OXIDE FILMS; SILICON CARBIDE;

INTERFACE STATES; NITROGEN IMPLANTATION; POSITIVE CHARGES; WET OXIDATION;

MOS CAPACITORS;

EID: 36148978949     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.241     Document Type: Article

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