A P-channel MOSFET on 4H-SiC

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1401-1404

  Han, J S ^a   Cheong, K Y ^a,b   Dimitrijev, S ^a   Laube, M ^c   Pensl, G ^c  

^a GRIFFITH UNIVERSITY   (Australia)

^b SCHOOL OF PHYSICS   (Malaysia)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Mobility; Nitridation; P channel MOSFET

Indexed keywords

CARRIER MOBILITY; GATES (TRANSISTOR); ION IMPLANTATION; NITRIDING; RANDOM ACCESS STORAGE; SILICON CARBIDE; THRESHOLD VOLTAGE;

GATE OXIDES; P-CHANNEL; SINGLE CRYSTAL WAFERS;

MOSFET DEVICES;

EID: 8744243283     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1401     Document Type: Conference Paper

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