1300-V 6H-SiC lateral MOSFETs with two RESURF zones

IEEE Electron Device Letters

Volumn 23, Issue 10, 2002, Pages 624-626

  Banerjee, S ^a,b   Chow, T P ^a,b   Gutmann, R J ^a,b  

^a IEEE   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Lateral device; Power MOSFET; Reduced surface field (RESURF); Silicon carbide

Indexed keywords

AVALANCHE BREAKDOWN; REDUCED SURFACE FIELD;

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; OXIDATION; POWER INTEGRATED CIRCUITS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

MOSFET DEVICES;

EID: 0036805048     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.803768     Document Type: Article

References (10)

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