10-kV, 123-mΩ·cm2 4H-SiC power DMOSFETs

IEEE Electron Device Letters

Volumn 25, Issue 8, 2004, Pages 556-558

  Ryu, Sei Hyung ^a   Krishnaswami, Sumi ^a   O'Loughlin, Michael ^a   Richmond, James ^a   Agarwal, Anant ^a   Palmour, John ^a   Hefner, Allen R ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON MOBILITY; GATES (TRANSISTOR); LEAKAGE CURRENTS; OPTIMIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBSTRATES; THRESHOLD VOLTAGE;

CHANNEL MOBILITY; DRIFT EPILAYER; HIGH SPEED SWITCHING;

MOSFET DEVICES;

EID: 4043056609     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.832122     Document Type: Article

References (10)

1. A. Agarwal, S.-H. Ryu, and J. Palmour et al., Silicon Carbide, Recent Major Advances, W. J. Choyke et al., Eds, Berlin,, Germany: Springer-Verlag, 2004, pp. 785-812.
2. S. Ryu, A. Agarwal, J. Richmond, J. Palmour, N. Saks, and J. Williams, "10 A, 2.4 kV power DiMOSFETs in 4H-SiC," IEEE Electron Device Lett., vol. 23, pp. 321-323, June 2002.
3. D. Peters, R. Schorner, P. Friedrichs, J. Volkl, H. Mitlehner, and D. Stephani, "An 1800 V triple implanted vertical 6H-SiC MOSFET," IEEE Trans. Electron Devices, vol. 46, pp. 542-545, Mar. 1999.
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5. S. Ryu, A. Agarwal, J. Richmond, and J. Palmour, "4H-SiC DMOSFETs for high frequency power switching applications," in Proc. Mater. Res. Soc. Symp., vol. 764, 2003, pp. C.2.7.1-C.2.7.6.
6. S. Ryu, S. Krishnaswami, A. Agarwal, J. Richmond, and J. Palmour, "Development of 10 kV 4H-SiC power DMOSFETs," presented at the ICSCRM Conf., Lyon, France, Oct. 5-10, 2003.
7. V. R. Vathulya, H. Shang, and M. W. White, "A novel 6H-SiC power DMOSFET with implanted p-well spacer," IEEE Electron Device Lett., vol. 20, pp. 354-356, July 1999.
8. 2 interface," Mater. Sci. Forum, vol. 389-393, pp. 985-988, 2002.
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10. D. Stephani, "Recent progress in the development of SiC power switches," presented at the ICSCRM Conf., Lyon, France, Oct. 5-10, 2003.