Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001̄) face

Applied Physics Letters

Volumn 84, Issue 12, 2004, Pages 2088-2090

  Fukuda, Kenji ^a   Kato, Makoto ^a   Kojima, Kazutoshi ^a   Senzaki, Junji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRODES; ENERGY GAP; FABRICATION; GATES (TRANSISTOR); HYDROGEN; MATHEMATICAL MODELS; OXIDATION; SILICA; SILICON CARBIDE;

HIGH DIELECTRIC FIELDS; HYDROGEN DENSITY;

MOSFET DEVICES;

EID: 1942540794     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1682680     Document Type: Article

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