High channel mobility in inversion layers of 4H-SiC MOSFET's by utilizing (112̄0) face

IEEE Electron Device Letters

Volumn 20, Issue 12, 1999, Pages 611-613

  Yano, Hiroshi ^a   Hirao, Taichi ^a   Kimoto, Tsunenobu ^a   Matsunami, Hiroyuki ^a   Asano, Katsunori ^b   Sugawara, Yoshitaka ^b  

^a KYOTO UNIVERSITY   (Japan)

^b KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL ORIENTATION; SILICON CARBIDE; THRESHOLD VOLTAGE;

CHANNEL MOBILITY;

MOSFET DEVICES;

EID: 0033357890     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.806101     Document Type: Article

References (15)

1. M. Schadt, G. Pensl, R. P. Devaty, W. J. Choyke, R. Stein, and D. Stephani, "Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide," Appl. Phys. Lett., vol. 65, no. 24, pp. 3120-3122, 1994.
2. W. J. Schaffer, G. H. Negley, K. G. Irvine, and J. W. Palmour, "Conductivity anisotropy in epitaxial 6H and 4H SiC," in Proc. Mat. Res. Soc. Symp., 1994, vol. 339, pp. 595-600.
3. A. K. Agarwal, J. B. Casady, L. B. Rowland, W. F. Valek, M. H. White, and C. D. Brandt, "1.1kV 4H-SiC power UMOSFET's," IEEE Electron Device Lett., vol. 18, pp. 586-588, Dec. 1997.
4. J. W. Palmour, S. T. Allen, R. Singh, L. A. Lipkin, and D. G. Waltz, "4H-silicon carbide power switching devices," in Inst. Phys. Conf. Ser., no. 142, pp. 813-816, 1996.
5. J. Spitz, M. R. Melloch, J. A. Cooper, Jr., and M. A. Capano, "2.6kV 4H-SiC lateral DMOSFET's," IEEE Electron Device Lett., vol. 19, pp. 100-102, Apr. 1998.
6. R. Schörner, P. Friedrichs, D. Peters, and D. Stephani, "Significantly improved performance of MOSFET's on silicon carbide using the 15R-SiC polytype," IEEE Electron Device Lett., vol. 20, pp. 241-244, May 1999.
7. M. K. Das, J. A. Cooper, Jr., M. R. Melloch, and M. A. Capano, "Inversion channel mobility in 4H-and 6H-SiC MOSFET's," in Proc. 29th IEEE Semiconductor Interface Specialist Conf., 1998.
8. 2 surface cleaning technique," IEEE Electron Device Lett., vol. 19, pp. 244-246, July 1998.
9. S. Sridevan and B. J. Baliga, "Lateral n-channel inversion mode 4H-SiC MOSFET's," IEEE Electron Device Lett., vol. 19, pp. 228-230, July 1998.
10. 2/SiC defects," J. Electron. Mater., vol. 25, no. 5, pp. 909-915, 1996.
11. D. Peters, R. Schörner, P. Friedrichs, J. Völkl, H. Mitlehner, and D. Stephani, "An 1800 V triple implanted vertical 6H-SiC MOSFET," IEEE Trans. Electron Devices, vol. 46, pp. 542-545, Mar. 1999.
12. K. Hara, "Vital issues for SiC power devices," Mater. Sci. Forum, vol. 264-268, pp. 901-906, 1998.
13. J. Tan, J. A. Cooper, Jr., and M. R. Melloch, "High-voltage accumulation-layer UMOSFET's in 4H-SiC," IEEE Electron Device Lett., vol. 19, pp. 487-489, Dec. 1998.
14. 2/SiC interface," J. Appl. Phys., vol. 79, no. 6, pp. 3042-3045, 1996.
15. G. Ghibaudo, "New method for the extraction of MOSFET parameters," Electron. Lett., vol. 24, no. 9, pp. 543-545, 1988.