High-voltage lateral RESURF MOSFET's on 4H-SiC

IEEE Electron Device Letters

Volumn 21, Issue 7, 2000, Pages 356-358

  Chatty, K ^a   Banerjee, S ^a   Chow, T P ^a   Gutmann, R J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; ELECTRIC CONTACTS; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON MOBILITY; INTEGRATED CIRCUIT MANUFACTURE; LOW TEMPERATURE OPERATIONS; NITROGEN; PHOSPHORUS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; VOLTAGE MEASUREMENT;

BLOCKING VOLTAGES; CONTACT RESISTANCE; REDUCED SURFACE FIELD STRUCTURE; SHEET RESISTANCE;

MOSFET DEVICES;

EID: 0034217270     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.847379     Document Type: Article

References (16)

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