Impact of dislocations on gate oxide in SiC MOS devices and high reliability ONO dielectrics

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 955-960

  Tanimoto, Satoshi ^a  

^a NISSAN MOTOR CO   (Japan)

Author keywords

Dielectric breakdown; Dislocation; Gate oxide; MOSFET; ONO; Reliability; TDDB

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN; EPITAXIAL LAYERS; MOSFET DEVICES; THICKNESS MEASUREMENT;

EPITAXIAL SUBSTRATES; GATE OXIDES; SUBSTRATE SURFACES;

GATE DIELECTRICS;

EID: 34248537580     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.955     Document Type: Conference Paper

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