4H-SIC Lateral RESURF MOSFET with a Burled Channel Structure

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 753-756

  Suzuki, S ^a   Harada, S ^a   Yatsuo, T ^a   Kosugi, R ^a   Senzaki, J ^a   Fukuda, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Blocking Voltage; Buried Channel; MOSFET; On Resistance; RESURF

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HYDROGEN; SILICON CARBIDE; SWITCHING SYSTEMS;

BLOCKING VOLTAGE; BURIED CHANNELS;

MOSFET DEVICES;

EID: 0242664947     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (8)

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