N2 O -grown oxides/ 4H-SiC (0001), (033̄8), and (11 2̄0) interface properties characterized by using p-type gate-controlled diodes

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Noborio, Masato ^a   Suda, Jun ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC DEVICES; DIODES; FIELD EFFECT TRANSISTORS; MOS CAPACITORS; MOSFET DEVICES; SEMICONDUCTOR DIODES; SILICON CARBIDE; SILICON COMPOUNDS; TRANSISTORS;

BANDGAP; CHANNEL MOBILITIES; INTERFACE PROPERTIES; INTERFACE STATES; INVERSION LAYERS; LOW FREQUENCIES; MINORITY CARRIERS; MOS FETS; QUASISTATIC; ROOM TEMPERATURES; SEMI-CONDUCTORS; SIC MOS CAPACITORS; SOURCE REGIONS; V CURVES; VALENCE BAND EDGES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 56249127493     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3028016     Document Type: Article

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