Improved dielectric and interface properties of 4H-SiC MOS structures processed by oxide deposition and N2O annealing

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 987-990

  Kimoto, T ^a   Kawano, H ^a   Noborio, M ^a   Suda, J ^a   Matsunami, H ^b  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Channel mobility; CVD; MOS; Nitridation; RESURF MOSFET

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; GATE DIELECTRICS; INTERFACES (MATERIALS); NITRIDATION; RAPID THERMAL ANNEALING;

BREAKDOWN STRENGTH; CHANNEL MOBILITY; DEPOSITED OXIDES; OXIDE DEPOSITION;

MOSFET DEVICES;

EID: 37849017149     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.987     Document Type: Conference Paper

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