Advances in SiC MOS technology

Physica Status Solidi (A) Applied Research

Volumn 162, Issue 1, 1997, Pages 305-320

  Cooper Jr , J A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATING MATERIALS; ENERGY GAP; INTERFACES (MATERIALS); MOS DEVICES; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS;

WIDE BAND GAP SEMICONDUCTORS;

SILICON CARBIDE;

EID: 0031189326     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396x(199707)162:1<305::aid-pssa305>3.0.co;2-7     Document Type: Article

References (35)

1. M. K. DAS, J. N. SHENOY, J. A. COOPER, JR., and M. R. MELLOCH, unpublished.
2. J. N. SHENOY, G. L. CHINDALORE, M. R. MELLOCH, J. A. COOPER, JR., J. W. PALMOUR, and K. G. IRVINE, J. Electronic Materials 24, 303 (1995).
3. L. M. TERMAN, Solid State Electronics 5, 285 (1962).
4. J. N. SHENOY, L. A. LIPKIN, G. L. CHINDALORE, J. PAN, J. A. COOPER, JR., J. W. PALMOUR, and M. R. MELLOCH, Inst. Phys. Conf. Ser. No. 141, 449 (1994).
5. J. N. SHENOY, Basic MOS Studies for Silicon Carbide Power Devices, PhD Thesis, Purdue University, December 1996.
6. A. GOETZBERGER and J. C. IRVIN, IEEE Trans. Electron Devices 15, 1009 (1968).
7. R. CASTAGNE and A. VAPAILLE , Surface Sci. 28, 873 (1970).
8. J. R. BREWS and E. H. NICOLLIAN, Solid State Electronics 27, 963 (1984).
9. E. H. NICOLLIAN and A. GOETZBERGER. Bell. Syst. Techn. J. 46, 1055 (1967).
10. T. OUISSE, N. BECOURT, C. JAUSSAUD, and F. TEMPLIER, J. Appl. Phys. 75, 604 (1994).
11. E. BANO, T. OUISSE, L. DICIOCCIO, and S. KARMANN. Appl. Phys. Lett. 65, 2723 (1994).
12. W. KERN and D. A. PUOTINEN, RCA Rev. 31, 187 (1970).
13. V. V. AFANASEV, A. STESMANS, M. BASSLER, G. PENSL, M. J. SCHULTZ, and C. J. HARRIS, Appl. Phys. Lett. 68, 2141 (1996).
14. C.-M. ZETTERLING, C. I. HARRIS, M. OSTLING, and V. V. AFANASEV, Inst. Phys. Conf. Ser. No. 142, 605 (1995).
15. S. ADACHI, M. MOHRI, and T. YAMASHINA, Surface Sci. 161, 479 (1985).
16. E. H. NICOLLIAN and J. R. BREWS, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley & Sons, New York 1982 (pp. 781 to 785).
17. A. GOLZ, G. LUCOVSKY, K. KOH, D. WOLFE, and H. KURZ, Semiconductor Interface Specialists Conf., San Diego (CA), December 5 to 7, 1996.
18. L. A. LIPKIN and J. W. PALMOUR, J. Electronic Materials 25, 909 (1996); also private communication, March 1997.
19. D. M. BROWN, M. GHEZZO, J. KRETCHMER, E. DOWNEY, J. PIMBLEY, and J. W. PALMOUR, IEEE Trans. Electron Devices 41, 618 (1994).
20. J. M. PALMOUR, R. F. DAVIS, H. S. KONG, S. F. CORCORAN, and D. P. GRIFFIS, J. Electrochem. Soc. 136, 502 (1989).
21. L. A. LIPKIN, J. W. PALMOUR, and J. S. SUEHLE, see [17].
22. S. SRIDEVAN, P. K. MCLARTY, and B. J. BALIGA, IEEE Electron Device Lett. 17, 136 (1996).
23. E. BANO, T. OUISSE, P. LASSAGNE, T. BILLON, and C. JAUSSAUD, Inst. Phys. Conf. Ser. No. 142, 729 (1995).
24. J. N. SHENOY, M. K. DAS, G. L. CHINDALORE, J. A. COOPER, JR., M. R. MELLOCH, J. W. PALMOUR, and K. G. IRVINE, Inst. Phys. Conf. Ser. No. 142, 745 (1995).
25. J. N. SHENOY, M. K. DAS, J. A. COOPER, JR., M. R. MELLOCH, and J. W. PALMOUR, J. Appl. Phys. 79, 3042 (1996).
26. J. N. SHENOY, J. A. COOPER, JR., and M. R. MELLOCH, Appl. Phys. Lett. 68, 803 (1996).
27. L. A. LIPKIN, J. W. PALMOUR, and J. S. SUEHLE, Trans. 3rd Internat. High Temperature Electronics Conf., Albuquerque (NM), June 9 to 14, 1996 (p. XIV-15).
28. E. BANO, T. OUISSE, P. LASSAGNE, T. BILLON, and C. JAUSSAUD, Inst. Phys. Conf. Ser. No. 142, 773 (1996).
29. D. C. CHAPPEL, J. P. SMITH, S. TAYLOR, W. ECCLESTON, M. K. DAS, and J. A. COOPER, JR., High Frequency CV Characteristics of Plasma Oxidised Silicon Carbide, to appear in IEE Electronics Lett., 1997.
30. S. SRIDEVAN, V. MISRA, P. K. MCLARTY, B. J. BALIGA, and J. J. WORTMAN, IEEE Electron Device Lett. 16, 524 (1995).
31. D. B. SLATER, JR., G. M. JOHNSON, L. A. LIPKIN, A. V. SUVOROV, and J. W. PALMOUR, see [27] (p. XVI-27).
32. J. TAN, M. K. DAS, J. A. COOPER, JR., and M. R. MELLOCH, Appl. Phys. Lett. 70, 2280 (1997).
33. J. W. PALMOUR and L. A. LIPKIN, private communication.
34. C. I. HARRIS, M. O. ABOELFOTOH, R. S. KERN, S. TANAKA, and R. F. DAVIS, Inst. Phys. Conf. Ser. No. 142, 777 (1996).
35. M. G. SPENCER and C.-M. ZETTERLING, private communication.