4H-SiC MIS capacitors and MISFETs with deposited SiNx/ SiO2 stack-gate structures

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 2054-2060

  Noborio, Masato ^a   Suda, Jun ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Channel mobility; Deposited insulator; Interface trap density; Metal insulator semiconductor (MIS); MOSFET; Silicon carbide (SiC); Silicon nitride (SiN ); Silicon oxynitride (SiOxNy )

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; NONMETALS; SILICON; SWITCHING CIRCUITS;

CHANNEL MOBILITY; DEPOSITED INSULATOR; INTERFACE TRAP DENSITY; METAL - INSULATOR - SEMICONDUCTOR (MIS); MIS CAPACITORS; MOSFET; SILICON CARBIDE (SIC); SILICON CARBIDE DEVICES; SILICON OXYNITRIDE (SIOXNY );

SILICON CARBIDE;

EID: 49249097889     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926644     Document Type: Article

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