A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (112̄0) face

Applied Physics Letters

Volumn 78, Issue 3, 2001, Pages 374-376

  Yano, Hiroshi ^a   Hirao, Taichi ^a   Kimoto, Tsunenobu ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000220527     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1340861     Document Type: Article

References (20)

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