Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Materials Science and Engineering R: Reports

Volumn 20, Issue 3, 1997, Pages 125-166

  Matsunami, Hiroyuki ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Characterization; Chemical vapour deposition; Electronic application; Growth mechanism; Silicon carbide; Step dynamics; Step controlled epitaxy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; HALL EFFECT; LOW TEMPERATURE PROPERTIES; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBSTRATES; SURFACE PHENOMENA;

STEP CONTROLLED EPITAXY; TWO DIMENSIONAL;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031206903     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-796X(97)00005-3     Document Type: Article

References (160)

1. A.R. Verma, P. Krishna (eds.), Polymorphism and Polytypism in Crystals, Wiley, New York, 1966.
2. W. von Muench, I. Pfaffeneder, J. Appl. Phys., 48 (1977) 4831.
3. D.W. Feldman, J.H. Parker Jr., W.J. Choyke, L. Patrick, Phys. Rev., 173 (1968) 787.
4. W. von Muench, E. Pettenpaul, J. Appl. Phys., 48 (1977) 4823.
5. G.A. Slack, J. Appl. Phys., 35 (1964) 3460.
6. M. Bhatnagar, B.J. Baliga, IEEE Trans. Electron Devices, 40 (1993) 645.
7. Yu.M. Tairo, V.F. Tsvetkov, J. Cryst. Growth, 52 (1981) 146.
8. Cree Research Inc., Durham, NC, USA.
9. K. Koga, T. Yamaguchi, Prog. Cryst. Growth Charact., 23 (1991) 127.
10. V.J. Jennings, A. Sommer, H. Chang, J. Electrochem. Soc., 113 (1966) 728.
11. W. von Muench, I. Phaffeneder, Thin Solid Films, 31 (1976) 39.
12. S. Yoshida, E. Sakuma, H. Okumura, S. Misawa, K. Endo, J. Appl. Phys., 62 (1987) 303.
13. N. Kuroda, K. Shibahara, W.S. Yoo, S. Nishino, H. Matsunami, Extended Abstracts, 34th Spring Meet, of the Japan Society of Applied Physics and Related Societies, Tokyo, 1987, p. 135 (in Japanese).
14. N. Kuroda, K. Shibahara, W.S. Yoo, S. Nishino, H. Matsunami, Extended Abstracts, 19th Conf. on Solid State Devices and Materials, Tokyo, 1987, p. 227.
15. H.S. Kong, J.T. Glass, R.F. Davis, J. Appl. Phys., 64 (1988) 2672.
16. J.A. Powell, D.J. Larkin, L.G. Matus, W.J. Choyke, J.L. Bradshaw, L. Henderson, M. Yoganathan, J. Yang, P. Pirouz, Appl. Phys. Lett., 56 (1990) 1442.
17. S. Karmann, W. Suttrop, A. Schöner, M. Schadt, C. Haberstroh, F. Engelbrecht, R. Helbig, G. Pensl, R.A. Stein, S. Leibenzeder, J. Appl. Phys., 72 (1992) 5437.
18. O. Kordina, A. Henry, C. Hallin, R.C. Glass, A.O. Konstantinov, C. Hemmingsson, N.T. Son, E. Janzén, Mater. Res. Soc. Symp. Proc., 339 (1994) 405.
19. A.A. Burk, Jr., D.L. Barrett, H.M. Hobgood, R.R. Siergiej, T.T. Braggins, R.C. Clarke, G.W. Eldridge, C.D. Brandt, D.J. Larkin, J.A. Powell, W.J. Choyke, Silicon Carbide and Related Materials, Institute of Physics, Bristol, 1994, p. 29.
20. R. Rupp, P. Lanig, J. Völkel, D. Stephani, J. Cryst. Growth, 146 (1995) 37.
21. R.F. Davis, G. Keiner, M. Shur, J.W. Palmour, J.A. Edmond, Proc. IEEE, 79 (1991) 677.
22. P.A. Ivanov, V.E. Chelnokov, Semicond. Sci. Technol., 7 (1992) 863.
23. H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burns, J. Appl. Phys., 76 (1994) 1363.
24. W. von Muench, I. Pfaffeneder, J. Electrochem. Soc., 122 (1975) 642.
25. A. Suzuki, H. Ashida, N. Furui, K. Mameno, H. Matsunami, Jpn. J. Appl. Phys., 21 (1982) 579.
26. J.W. Matthews (ed.), Epitaxial Growth, Part B, Academic Press, New York, 1975, Chapter 5.
27. T. Ueda, H. Nishino, H. Matsunami, J. Cryst. Growth, 104 (1990) 695.
28. V. Heine, C. Cheng, R.J. Needs, J. Am. Ceram. Soc., 74 (1991) 2630.
29. W.S. Yoo, H. Matsunami, Amorphous and Crystalline Silicon Carbide IV, Springer-Verlag, Berlin, 1992, p. 66.
30. J.A. Powell, J.B. Petit, J.H. Edgar, I.G. Jenkins, L.G. Matus, J.W. Yang, P. Pirouz, W.J. Choyke, L. Clemen, M. Yoganathan, Appl. Phys. Lett., 59 (1991) 333.
31. Yu.M. Tairov, V.F. Tsvetkov, S.K. Lilov, G.K. Safaraliev, J. Cryst. Growth, 36 (1976) 147.
32. Y. Matsushita, T. Nakata, T. Uetani, T. Yamaguchi, T. Niina, Jpn. J. Appl. Phys., 29 (1990) L343.
33. S. Tanaka, R.S. Kern, R.F. Davis, Appl. Phys. Lett., 65 (1994) 2851.
34. J.A. Powell, H.A. Will, J. Appl. Phys., 44 (1973) 5177.
35. A. Yamashita, W.S. Yoo, T. Kimoto, H. Matsunami, Jpn. J. Appl. Phys., 31 (1992) 3655.
36. T. Kimoto, H. Nishino, W.S. Yoo, H. Matsunami, J. Appl. Phys., 73 (1993) 726.
37. B. Wessels, H.C. Gatos, A.F. Witt, Silicon Carbide 1973, University of South Carolina Press, Columbia, SC, 1974, p. 25.
38. M.D. Allendorf, R.J. Kee, J. Electrochem. Soc., 138 (1991) 841.
39. C.D. Stinespring, J.C. Wormhoudt, J. Cryst. Growth, 87 (1988) 481.
40. C. Hallin, A.O. Konstantinov, O. Kordina, E. Janzén, Silicon Carbide and Related Materials 1995, Institute of Physics, Bristol, 1996, p. 85.
41. A.A. Burk, Jr., L.B. Rowland, J. Cryst. Growth, 167 (1996) 586.
42. H.S. Kong, J.T. Glass, R.F. Davis, J. Mater. Res., 4 (1989) 204.
43. S. Karmann, C. Haberstroh, F. Engelbrecht, W. Suttrop, A. Schöner, M. Schadt, R. Helbig, G. Pensl, R.A. Stein, S. Leibenzeder, Physica B, 185 (1993) 75.
44. F.C. Eversteyn, P.J.W. Severin, C.H.J. v.d. Brekel, H.L. Peek, J. Electrochem. Soc., 117 (1970) 925.
45. R.C. Weast (ed.), CRC Handbook of Chemistry and Physics, CRC Press, Boca Raton, FL, 1975.
46. W.K. Burton, N. Cabrera, F.C. Frank, Philos. Trans. R. Soc. London, Ser. A, 243 (1951) 299.
47. J.O. Hirschfelder, F. Curties, R.B. Bird, Molecular Theory of Gases and Liquids, Wiley, New York, 1954.
48. T. Kimoto, H. Matsunami, J. Appl. Phys., 75 (1994) 850.
49. A.O. Konstantinov, C, Hallin, O. Kordina, E. Janzén, Silicon Carbide and Related Materials 1995, Institute of Physics, Bristol, 1996, p. 249.
50. J.P. Hirth, G.M. Pound, Condensation and Evaporation, Nucleation and Growth Kinetics, Pergamon, Oxford, 1963, Chapter D.
51. E. Pearson, T. Takai, T. Halicioglu, W.A. Tiller, J. Cryst. Growth, 70 (1984) 33.
52. X.S. Wang, J.L. Goldberg, N.C. Bartelt, T.L. Einstein, E.D. Williams, Phys. Rev. Lett., 65 (1990) 2430.
53. M. Kasu, N. Kobayashi, Appl. Phys. Lett., 62 (1993) 1262.
54. S.L. Skala, S.T. Chou, K.Y. Cheng, J.R. Tucker, J.W. Lyding, Appl. Phys. Lett., 65 (1994) 722.
55. A.J. Steckl, M.D. Roth, J.A. Powell, D.J. Larkin, Appl. Phys. Lett., 62 (1993) 2545.
56. S. Tyc, Silicon Carbide and Related Materials, Institute of Physics, Bristol, 1994, p. 333.
57. M.A. Kulakov, P. Heuell, V.F. Tsvetkov, B. Bullemer, Surf. Sci., 315 (1994) 248.
58. J.A. Powell, D.J. Larkin, P.B. Abel, J. Electron. Mater., 24 (1995) 295.
59. S. Tanaka, R.C. Kern, R.F. Davis, J.F. Wendelken, J. Wu, Surf. Sci., 350 (1996) 247.
60. T. Kimoto, A. Itoh, H. Matsunami, Appl. Phys. Lett., 66 (1995) 3645.
61. C. Herring, Phys. Rev., 82 (1951) 87.
62. W.A. Tiller, The Science of Crystallization: Microscopic Interfacial Phenomena, Cambridge University Press, Cambridge, 1991, Chapter 2.
63. V.F. Tsvetkov, S.T. Allen, H.S. Kong, C.H. Carter, Jr., Silicon Carbide and Related Materials 1995, Institute of Physics, Bristol, 1996, p. 17.
64. T. Kimoto, PhD Dissertation, Kyoto University, 1995.
65. B.A. Joyce, R.R. Bradley, G.R. Booker, Philos. Mag., 15 (1967) 1167.
66. J. Nishizawa, T. Terasaki, M. Shimbo, J. Cryst. Growth, 17 (1972) 241.
67. T. Kimoto, H. Matsunami, J. Appl. Phys., 76 (1994) 7322.
68. T. Kimoto, H. Matsunami, J. Appl. Phys., 78 (1995) 3132.
69. T. Tachibana, H.S. Kong, Y.C. Wang, R.F. Davis, J. Appl. Phys., 67 (1990) 10.
70. A. Henry, O. Kordina, C. Hallin, C. Hemmingsson, E. Janzén, Appl. Phys. Lett., 65 (1994) 2457.
71. K. Koga, Y. Fujikawa, Y. Ueda, T. Yamaguchi, Amorphous and Crystalline Silicon Carbide IV, Springer Proc. Physics 71, Springer, Berlin, 1992, p. 96.
72. R.A. Stein, Physica B, 185 (1993) 211.
73. H.M. Hobgood, D.L. Barrett, J.P. McHugh, R.C. Clarke, S. Sriram, A.A. Burk, J. Greggi, C.D. Brandt, R.H. Hopkins, W.J. Choyke, J. Cryst. Growth, 137 (1994) 181.
74. J. Takahashi, M. Kanaya, Y. Fujiwara, J. Cryst. Growth, 135 (1994) 61.
75. S. Wang, M. Dudley, C.H. Carter, Jr., H.S. Kong, Mater. Res. Soc. Symp. Proc., 339 (1994) 735.
76. A.W.C. van Kemenade, S.H. Hagen, Solid State Commun., 14 (1974) 1331.
77. K.M. Lee, L.S. Dang, G.D. Watkins, W.J. Choyke, Phys. Rev. B, 32 (1985) 2273.
78. W.J. Choyke, L. Patrick, Silicon Carbide 1973, University of South Carolina Press, Columbia, SC, 1974, p. 261.
79. L.L. Clemen, M. Yoganathan, W.J. Choyke, R.P. Devaty, H.S. Kong, J.A. Edmond, D.J. Larkin, J.A. Powell, A.A. Burk, Jr., Silicon Carbide and Related Materials, Institute of Physics, Bristol, 1994, p. 251.
80. L.L. Clemen, R.P. Devaty, M.F. MacMillan, M. Yoganathan, W.J. Choyke, D.J. Larkin, J.A. Powell, J.A. Edmond, H.S. Kong, Appl. Phys. Lett., 62 (1993) 2953.
81. O. Kordina, J.P. Bergman, A. Henry, E. Janzén, Appl. Phys. Lett., 66 (1995) 189.
82. E. Janzén, O. Kordina, Silicon Carbide and Related Materials 1995, Institute of Physics, Bristol, 1996, p. 653.
83. N.T. Son, E. Sörman, W.M. Chen, O. Kordina, B. Monemar, E. Janzén, Appl. Phys. Lett., 65 (1994) 2687.
84. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981.
85. W. Choyke, L. Patrick, Phys. Rev., 127 (1962) 1868.
86. M. Ikeda, H. Matsunami, T. Tanaka, Phys. Rev. B, 22 (1980) 2842.
87. W. Suttrop, G. Pensl, W.J. Choyke, R. Stein, S. Leibenzeder, J. Appl. Phys., 72 (1992) 3708.
88. W. Götz, A. Schöner, G. Pensl. W. Suttrop, W.J. Choyke, R. Stein, S. Leibenzeder, J. Appl. Phys., 73 (1993) 3332.
89. D. Long, Phys. Rev., 120 (1960) 2024.
90. H. Okushi, Y. Tokumaru, Jpn. J. Appl. Phys., 20, Suppl. 20-1 (1980) 261.
91. S. Jang, T. Kimoto, H. Matsunami, Appl. Phys. Lett., 65 (1994) 581.
92. G. Pensl, W.J. Choyke, Physica B, 185 (1993) 264.
93. T. Dalibor, G. Pensl, R.P. Devaty, W.J. Choyke, T. Kimoto, H. Matsunami, unpublished results.
94. T. Kimoto, A. Itoh, H. Matsunami, S. Sridhara, L.L. Clemen, R.P. Devaty, W.J. Choyke, T. Dalibor, C. Peppermüller, G. Pensl, Appl. Phys. Lett., 67 (1995) 2833.
95. Y.C. Wang, R.F. Davis, J.A. Edmond, J. Electron. Mater., 20 (1991) 289.
96. D.J. Larkin, P.G. Neudeck, J.A. Powell, L.G. Matus, Appl. Phys. Lett., 65 (1994) 1659.
97. T. Kimoto, A. Itoh, H. Matsunami, Appl. Phys. Lett., 67 (1995) 2385.
98. W.J. Schaffer, G.H. Negley, K.G. Irvine, J.W. Palmour, Mater. Res. Soc. Symp. Proc., 339 (1994) 595.
99. M. Schadt, G. Pensl, R.P. Devaty, W.J. Choyke, R. Stein, D. Stephani, Appl. Phys. Lett., 65 (1994) 3120.
100. V.I. Fistul, Heavily Doped Semiconductors, Plenum, New York, 1969.
101. Yu.A. Vodakov, N. Zhumaev, B.P. Zverev, G.A. Lomakina, E.N. Mokhov, V.G. Oding, V.V. Semenov, Yu.F. Simakhin, Sov. Phys. Semicond., 11 (1977) 214.
102. W. Suttrop, G. Pensl, P. Lanig, Appl. Phys. A, 51 (1990) 231.
103. S. Jang, T. Kimoto, H. Matsunami, unpublished results.
104. J.R. Waldrop, R.W. Grant, Y.C. Wang, R.F. Davis, J. Appl. Phys., 72 (1992) 4757.
105. J.R. Waldrop, R.W. Grant, Appl. Phys. Lett., 62 (1993) 2685.
106. A. Itoh, O. Takemura, T. Kimoto, H. Matsunami, Silicon Carbide and Related Materials 1995, Institute of Physics, Bristol, 1996, p. 685.
107. C.-M. Zettering, M. Östling, Physica Scr., T54 (1994) 291.
108. V.V. Afanas'ev, M. Bassler, G. Pensl, M.J. Schulz, E. Stein von Kamienski, J. Appl. Phys., 79 (1996) 3108.
109. T. Kimoto, A. Itoh, O. Takemura, S. Kobayashi, H. Matsunami, Extended Abstracts, 1996 Electronic Materials Conf., Santa Barbara, CA, 1996, p. 19.
110. N. Tokura, K. Hara, T. Miyajima, H. Fuma, K. Hara, Jpn. J. Appl. Phys., 34 (1995) 5567.
111. M. Ruff, H. Mitlehner, R. Helbig, IEEE Trans. Electron Devices, 41 (1994) 1040.
112. M. Bhatnagar, P.K. McLarty, B.J. Baliga, IEEE Electron Devices Lett., 13 (1992) 501.
113. T. Kimoto, T. Urushidani, S. Kobayashi, H. Matsunami, IEEE Electron Devices Lett., 14 (1993) 548.
114. A. Itoh, T. Kimoto, H. Matsunami, IEEE Electron Devices Lett., 16 (1995) 280.
115. R. Raghunathan, D. Alok, B.J. Baliga, IEEE Electron Devices Lett., 16 (1995) 226.
116. J.A. Edmond, D.G. Waltz, S. Brueckner, H.S. Kong, J.W. Palmour, C.H. Carter, Jr., Trans. 1st Int. High Temperature Electronics Conf., Albuquerque, NM, 1991, p. 207.
117. M. Bhatnagar, H. Nakanishi, S. Bothra, P.K. McLarty, B.J. Baliga, Proc. 5th Int. Symp. on Power Semiconductor Devices and ICs, 1993, p. 89.
118. D. Alok, B.J. Baliga, P.K. McLarty, IEEE Electron Devices Lett., 15 (1994) 394.
119. A. Itoh, T. Kimoto, H. Matsunami, IEEE Electron Devices Lett., 17 (1996) 139.
120. K. Ueno, T. Urushidani, K. Hashimoto, Y. Seki, IEEE Electron Devices Lett., 16 (1995) 331.
121. P.G. Neudeck, D.J. Larkin, J.A. Powell, L.G. Matus, C.S. Salupo, Appl. Phys. Lett., 64 (1994) 1386.
122. P.G. Neudeck, J.A. Powell, IEEE Electron Devices Lett., 15 (1994) 63.
123. O. Kordina, J.P. Bergman, A. Henry, E. Janzén, S. Savage, J. André, L.P. Ramberg, U. Lindefelt, W. Hermansson, K. Bergman, Appl. Phys. Lett., 67 (1995) 1561.
124. A.O. Konstantinov, Amorphous and Crystalline Silicon Carbide III, Springer-Verlag, Berlin, 1992, p. 1659.
125. P.G. Neudeck, D.J. Larkin, C. Fazi, Extended Abstracts, 54th Device Research Conf., Santa Barbara, CA, 1996, VI.B-5.
126. M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D.L. Polla, H. Bakhru, IEEE Electron Devices Lett., 12 (1992) 639.
127. D. Alok, B.J. Baliga, Proc. 8th Int. Symp. on Power Semiconductor Devices and ICs, 1996, p. 107.
128. T. Kimoto, N. Inoue, A. Itoh, H. Matsunami, T. Nakata, M. Inoue, Extended Abstracts, 1996 Electronic Materials Conf., Santa Barbara, CA, 1996, p. 16.
129. M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer, J.J. Kopanski, Appl. Phys. Lett., 63 (1993) 1206.
130. K. Hölzlein, H. Mitlehner, R. Rupp, R. Stein, D. Peters, J. Völkl, D. Stephani, Silicon Carbide and Related Materials 1995, Institute of Physics, Bristol, 1996, p. 813.
131. J.W. Palmour, J.A. Edmond, H.S. Kong, C.H. Carter, Jr., Silicon Carbide and Related Materials, Institute of Physics, Bristol, 1994, p. 499.
132. J.W. Palmour, S.T. Allen, R. Singh, L.A. Lipkin, D.G. Waltz, Silicon Carbide and Related Materials 1995, Institute of Physics, Bristol, 1996, p. 813.
133. A.K. Agarwal, R.R. Siergiej, S. Seshadri, M.H. White, P.G. McMullin, A.A. Burk, Jr., L.B. Rowland, C.D. Brandt, R.H. Hopkins, Proc. 8th Int. Symp. on Power Semiconductor Devices and ICs, 1996, p. 119.
134. M. Bhatnagar, D. Alok, B.J. Baliga, Silicon Carbide and Related Materials, Institute of Physics, Bristol, 1994, p. 703.
135. S. Kobayashi, T. Kimoto, H. Matsunami, Jpn. J. Appl. Phys., 35 (1996) 3331.
136. J.N. Shenoy, M.R. Melloch, J.A. Cooper, Jr., Extended Abstracts, 54th Device Research Conf., Santa Barbara, CA, 1996, III.A-4R.
137. J.W. Palmour, R. Singh, D.G. Waltz, Extended Abstracts, 54th Device Research Conf., Santa Barbara, CA, 1996, p. 54.
138. K. Xie, H.H. Zhao, J.R. Flemish, T. Burke, W.R. Buchwald, G. Lorenzo, H. Singh, IEEE Electron Devices Lett., 17 (1996) 142.
139. R.J. Trew, J.B. Yan, P.M. Mock, Proc. IEEE, 79 (1991) 598.
140. C.E. Weitzel, IEEE Electron Devices Lett., 16 (1995) 451.
141. J.W. Palmour, J.A. Edmond, H.S. Kong, C.H. Carter, Jr., Amorphous and Crystalline Silicon Carbide IV, Springer-Verlag, Berlin, 1992, p. 289.
142. H.M. Hobgood, R.C. Glass, G. Augustine, R.H. Hopkins, J. Jenny, M. Skowronski, W.C. Mitchel, M. Roth, Appl. Phys. Lett., 66 (1995) 1364.
143. S. Sriram, G. Augustine, A.A. Burk, Jr., R.C. Glass, H.M. Hobgood, P.A. Orphanos, L.B. Rowland, T.J. Smith, C.D. Brandt, M.C. Driver, R.H. Hopkins, IEEE Electron Devices Lett., 17 (1996) 369.
144. S.T. Allen, J.W. Palmour, V.F. Tsvetkov, S.J. Macko, C.H. Carter, Jr., K.E. Moore, C.E. Weitzel, K.J. Nordquist, L.L. Pond III, Silicon Carbide and Related Materials 1995, Institute of Physics, Bristol, 1996, p. 761.
145. R.R. Siergiej, S, Sriram, R.C. Clarke, A.K. Agarwal, C.D. Brandt, A.A. Burk, Jr., T.J. Smith, A. Morse, P.A. Orphanos, Silicon Carbide and Related Materials 1995, Institute of Physics, Bristol, 1996, p. 769.
146. R.R. Siergiej, R.C. Clarke, A.K. Agarwal, C.D. Brandt, A.A. Burk, Jr., A. Morse, P.A. Orphanos, Tech. Digest Int. Electron Device Meet., 1995, p. 353.
147. R.C. Clarke, A.K. Agarwal, R.R. Siergiej, C.D. Brandt, A.W. Morse, Extended Abstracts, 54th Device Research Conf., Santa Barbara, CA, 1996, p. 62.
148. J.W. Palmour, H.S. Kong, D.G. Waltz, J.A. Edmond, C.H. Carter, Jr., Trans. 1st Int. High Temperature Electronics Conf., Albuquerque, NM, 1991, p. 511.
149. J.W. Palmour, J.A. Edmond, H.S. Kong, C.H. Carter, Jr., Physica B, 185 (1993) 461.
150. T. Billon, T. Ouisse, P. Lassagne, C. Jassaud, J.L. Ponthenier, L. Baud, N. Bécourt, P. Morfouli, Electron. Lett., 30 (1994) 170.
151. D.M. Brown, M. Ghezzo, J.W. Kretchmer, V. Krishnamarthy, G. Michon, G. Gati, Trans. 2nd High Temperature Electronics Conf., Charlotte, 1994, XI-17.
152. W. Xie, J.A. Cooper, Jr., M.R. Melloch, IEEE Electron Devices Lett., 15 (1994) 455.
153. D.B. Slater, Jr., L.A. Lipkin, G.M. Johnson, A.V. Suvorov, J.W. Palmour, Silicon Carbide and Related Materials 1995, Institute of Physics, Bristol, 1996, p. 805.
154. L.A. Lipkin, J.W. Palmour, J.S. Suehle, Trans. 3rd High Temperature Electronics Conf., Albuquerque, NM, 1996, XIV-15.
155. J.M. McGarrity, F.B. McLean, W.M. DeLancey, J.W. Palmour, C.H. Carter, Jr., J.A. Edmond, R.E. Oakley, IEEE Trans. Nuclear Sci., 39 (1992) 1974.
156. D.B. Slater, Jr., G.M. Johnson, L.A. Lipkin, A.V. Suvorov, J.W. Palmour, Extended Abstracts, 54th Device Research Conf., Santa Barbara, CA, 1996, p. 62.
157. D.M. Brown, E.T. Downey, M. Ghezzo, J.W. Kretchmer, R.J. Saia, Y.S. Liu, J.A. Edmond, G. Gati, J.M. Pimbley, W.E. Schneider, IEEE Trans. Electron Devices, 40 (1993) 325.
158. W. Xie, J.A. Cooper, Jr., M.R. Melloch, J.W. Palmour, C.H. Carter, Jr., IEEE Electron Devices Lett., 15 (1994) 212.
159. W. Xie, Y. Wang, M.R. Melloch, J.A. Cooper, Jr., G.M. Johnson, L.A. Lipkin, J.W. Palmour, C.H. Carter, Jr., Silicon Carbide and Related Materials 1995, Institute of Physics, Bristol, 1996, p. 785.
160. S.T. Sheppard, M.R. Melloch, J.A. Cooper, Jr., IEEE Electron Device Lett., 17 (1996) 4.