Selective epitaxy and lateral overgrowth of 3C-SiC on Si - A review

Progress in Crystal Growth and Characterization of Materials

Volumn 51, Issue 1-3, 2005, Pages 43-69

  Gupta, Aparna ^a   Jacob, Chacko ^a,b  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b Materials Research Society of India   (India)

Author keywords

A1: Interfacial defects; A3: Channel epitaxy; A3: Pendeo epitaxy; A3: Selective epitaxial growth; B1: 3C SiC; B3: High power devices; B3: High temperature devices

Indexed keywords

CHANNEL EPITAXY; HIGH-POWER DEVICES; SELECTIVE EPITAXIAL GROWTH (SEG);

EPITAXIAL GROWTH; HIGH TEMPERATURE APPLICATIONS; MICROELECTROMECHANICAL DEVICES;

SILICON CARBIDE;

EID: 28544434644     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.pcrysgrow.2005.10.003     Document Type: Review

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