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Journal of Crystal Growth

Volumn 233, Issue 1-2, 2001, Pages 112-120

Local epitaxy and lateral epitaxial overgrowth of SiC

(4) Khlebnikov, Y a Khlebnikov, I a Parker, M a Sudarshan, T S a

a University of South Carolina (United States)

Author keywords

A1. defects; A1. etching; A1. substrates; A2. growth from vapor; A3. selective epitaxy; A3. vapor phase epitaxy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETCHING; GRAPHITE; MASKS; NUCLEATION; SINGLE CRYSTALS; SUBSTRATES; VAPOR PHASE EPITAXY;

PHYSICAL VAPOR TRANSPORT (PVT) EPITAXY;

SILICON CARBIDE;

EID: 0035502149 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01558-5 Document Type: Article

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.