Selective epitaxial growth of silicon carbide on SiO2 masked Si(100): The effects of temperature

Journal of Applied Physics

Volumn 84, Issue 1, 1998, Pages 201-204

  Edgar, J H ^a   Gao, Y ^a   Chaudhuri, J ^b   Cheema, S ^b   Casalnuovo, S A ^c   Yip, P W ^d   Sidorov, M V ^e  

^a Sunflower Networking Group   (United States)

^b Wichita State University   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

^e ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000757467     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368017     Document Type: Article

References (12)

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