Selective epitaxial growth of SiC: Thermodynamic analysis of the Si-C-Cl-H and Si-C-Cl-H-O systems

Journal of the Electrochemical Society

Volumn 144, Issue 5, 1997, Pages 1875-1880

  Gao, Y ^a   Edgar, J H ^a  

^a Sunflower Networking Group   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; THERMODYNAMIC PROPERTIES;

COPEDOSITION; SELECTIVE EPITAXIAL GROWTH;

SILICON CARBIDE;

EID: 0031146622     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837694     Document Type: Article

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