Optimization of growth condition for wide dislocation-free GaAs on Si substrate by microchannel epitaxy

Journal of Crystal Growth

Volumn 192, Issue 1-2, 1998, Pages 18-22

  Chang, Y S ^a   Naritsuka, S ^a   Nishinaga, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Epitaxial lateral overgrown; GaAs on Si; Heteroepitaxy; LPE; Microchannel epitaxy

Indexed keywords

ETCHING; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR LASERS; TEMPERATURE;

GROWTH TEMPERATURE; HETEROEPITAXY; LINE SEED SEPARATION; MICROCHANNEL EPITAXY; VERTICAL CAVITY SURFACE EMITTING LASER; WIDTH TO THICKNESS RATIO;

SEMICONDUCTOR GROWTH;

EID: 0032475004     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00407-2     Document Type: Article

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