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Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 322-329

Experimental assessment of metal solvents for low-temperature liquid-phase epitaxy of silicon carbide

(4) Mauk, Michael G a Feyock, Bryan W a Sharma, Archana b Hunsperger, Robert G b

a GE ENERGY (United States)

b UNIVERSITY OF DELAWARE (United States)

Author keywords

A3. Liquid phase epitaxy; B2. Semiconducting silicon compounds

Indexed keywords

EVAPORATION; LIQUID PHASE EPITAXY; LOW TEMPERATURE PHENOMENA; SEMICONDUCTING FILMS; SOLVENTS; SUBSTRATES;

METAL SOLVENTS;

SILICON CARBIDE;

EID: 0035333389 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00887-9 Document Type: Conference Paper

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.