Lateral epitaxial overgrowth and reduction in defect density of 3C-SiC on patterned Si substrates

Journal of Crystal Growth

Volumn 271, Issue 1-2, 2004, Pages 200-206

  Bushroa, A R ^a,b   Jacob, C ^a,c   Saijo, H ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF MALAYA   (Malaysia)

^c INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

A1. Atomic force microscopy; A1. Cathodoluminescence microscopy; A3. Chemical vapor deposition processes; A3. Lateral epitaxial overgrowth; A3. Selective epitaxy; B1. 3C SiC

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; COALESCENCE; CRYSTAL GROWTH; DEFECTS; SILANES; SILICON; SILICON CARBIDE; SUBSTRATES;

CATHODOLUMINESCENE; LATERAL EPITAXIAL OVERGROWTH; MICROGRAPHS; SELECTIVE EPITAXY;

EPITAXIAL GROWTH;

EID: 5044221735     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.061     Document Type: Article

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