Epitaxial Lateral Overgrowth of GaAs: Principle and Growth Mechanism

Crystal Research and Technology

Volumn 34, Issue 5, 1999, Pages 573-582

  Zytkiewicz, Z R ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

Epitaxial lateral overgrowth; GaAs; Gibbs Thomson effect; Liquid phase epitaxy (LPE)

Indexed keywords

EID: 0000965957     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4079(199906)34:5/6<573::AID-CRAT573>3.0.CO;2-0     Document Type: Article

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