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Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 175-178

Selective deposition of 3C-SiC epitaxially grown on SOI substrates

(7) Eickhoff, M a Zappe, S b Nielsen, A a Krotz G a Obermeier, E b Vouroutzis, N c Stoemenos, J c

a DAIMLER AG (Germany)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

c ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

LAYER THICKNESS; METHYLSILANE; SELECTIVE DEPOSITION; SELECTIVE EPITAXY;

CRYSTAL STRUCTURE; DECOMPOSITION; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; SILANES; SILICA; SILICON ON INSULATOR TECHNOLOGY; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

SILICON CARBIDE;

EID: 14344270402 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Article

Times cited : (3)

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