Selective area growth of GaN directly on (0001) sapphire by the HVPE technique

MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

  Singh, Raj ^a   Barrett, Richard J ^a   Gomes, John J ^a   Dabkowski, Ferdynand P ^a   Moustakas, T D ^b  

^a POLAROID CORPORATION   (United States)

^b Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; EPITAXIAL GROWTH; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SAPPHIRE; SUBSTRATES; SURFACE STRUCTURE; THICK FILMS;

DIELECTRIC LAYERS; ELECTRON CONCENTRATION; EPITAXIAL LATERAL OVERGROWTH (ELO); HYDRIDE VAPOR PHASE EPITAXY (HVPE);

GALLIUM NITRIDE;

EID: 4043165511     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000855     Document Type: Article

References (5)

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3. T. Shibata, H. Sone, K. Yahashi, M. Yamaguchi, K. Hiramatsu, N. Sawaki, N. Itoh, Proc. Second Int. Conf. Nitride Semicond., "Hydride Vapor Phase Epitaxy Growth of High Quality GaN Bulk Single Crystal by Epitaxial Lateral Overgrowth", Tokushima, Japan 155 (1997)
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