Channel epitaxy of 3C-SiC on Si substrates by CVD

Materials Research Society Symposium - Proceedings

Volumn 742, Issue , 2002, Pages 15-22

  Nishino, S ^a   Okui, Y ^a   Jacob, C ^b   Ohshima, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COALESCENCE; CRYSTAL DEFECTS; EPITAXIAL GROWTH; FILM GROWTH; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES;

CHANNEL EPITAXY;

SILICON CARBIDE;

EID: 0038179813     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-742-k1.2     Document Type: Conference Paper

References (10)

1. S. Nishino J.A. Powell and H.A. Will: Appl. Phys. Lett. 42 (1983) 460.
2. Y. S. Chang, S. Naritsuka and T. Nishinaga: J. Crystal Growth, Vol. 192, (1998) 18-22.
3. C. Jacob, M.H. Hong, J. Chung, P. Pirouz and S. Nishino: Materials Science Forum Vols. 338-342 (2000) 249.
4. S.E. Saddow, GE. Carter, B. Geil, T. Zheleva, G. Melnychuk, ME. Okhuysen, M.S. Mazzola, R.D. Vispute, M. Derenge, M. Ervin, K.A. Jones: Matl. Sci. For. 338-342 (2000), 245.
5. Y. Okui, C. Jacob, S. Ohshima and S. Nishino: Materials Science Forum Vols. 389-393 (2002) 331.
6. C. Jacob, P. Pirouz and S. Nishino: Mater. Sci. Forum Vols. 353-356 (2001), p. 127.
7. T.S. Zheleva, O-H Nam, M.D. Bremser and R.F. Davis: Appl. Phys. Lett. 71 (1997) 2472.
8. H. Marchand, J.P. Ibbetson, P.T. Fini, P. Kosodoy, S. Keller, S. denBaars, J.S. Speck, U.K. Mishra: Materials Internet Journal -Nitride Semiconductor Research 3 (1998), p. 3.
9. I. Kidoguchi, A. Ishibashi, G. Sugahara, and Y. Ban Appl. Phys. Lettters, vol.76, No.25, (2000) 3768-3770.
10. P. Fini, H. Marchand, J.P. Ibettson B. Moran, L. Zao, S.P. Denbaars, J.P. Speck, and U.K. Mishra, Mat. Res. Soc. symp. Proc.572, (1999) 315.