Selective homoepitaxy of 4H-SiC on (0 0 0 1) and (1 1 2̄ 0) masked substrates

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1224-1229

  Chen, Y ^a   Kimoto, T ^a   Takeuchi, Y ^b   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

A3. Characterization; A3. Chemical vapor deposition processes; A3. Mesa structures; A3. Selective epitaxy; B2. Semiconducting silicon compounds

Indexed keywords

HYDROGEN; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

HOMOEPITAXY; MESA STRUCTURE;

EPITAXIAL GROWTH;

EID: 0036531555     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02176-5     Document Type: Article

References (9)