Substrate defects filtration during epitaxial lateral overgrowth of GaAs

Acta Physica Polonica A

Volumn 92, Issue 5, 1997, Pages 1079-1082

  Zytkiewicz, Z R ^a   Dobosz, D ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344455354     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.92.1079     Document Type: Article

References (5)

1. R.J. Matyi, H. Shichijo, T.M. Moore, H-L. Tsai, Appl. Phys. Lett. 51, 18 (1987).
2. P. Vohl, J. Cryst. Growth 54, 101 (1981).
3. T. Nishinaga, Cryst. Prop. Prep. 31, 92 (1991).
4. G. Nozle, V. Geist, G. Wagner, P. Paufler, K. Jurkschat, Z. Kristallogr. 193, 111 (1990).
5. M. Ohara, R.C. Reid, Modeling Crystal Growth Rates from Solution, Prentice-Hall, Englewoods Cliffs 1973.