Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 209-212

  Okui, Y ^a   Jacob, C ^b   Ohshima, S ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

HMDS; Lateral Epitaxial Overgrowth; Pendeo Epitaxy; SEM

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COALESCENCE; DEPOSITION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY;

CARRIER FLOW RATE;

SILICON CARBIDE;

EID: 0242665456     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.209     Document Type: Conference Paper

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