Pendeo epitaxial growth of 3C-SiC on Si substrates

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 257-260

  Shoji, A ^a   Okui, Y ^a   Nishiguchi, T ^a   Ohshima, S ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

3C SiC; Heteroepitaxy; HMDS; Pendeo

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTRONS; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; PROPANE;

3C-SIC; HETEROEPITAXY; HEXAMETHYLDISILANE (HMDS); PENDEO;

SILICON CARBIDE;

EID: 8744272352     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.257     Document Type: Conference Paper

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