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Volumn 14, Issue 5, 1999, Pages 465-469

Epitaxial lateral overgrowth of GaAs: Effect of doping on LPE growth behaviour

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CRYSTAL IMPURITIES; LIQUID PHASE EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR GROWTH; TIN;

EID: 0032640229     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/5/316     Document Type: Article
Times cited : (22)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.