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Volumn 14, Issue 5, 1999, Pages 465-469
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Epitaxial lateral overgrowth of GaAs: Effect of doping on LPE growth behaviour
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Author keywords
[No Author keywords available]
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Indexed keywords
ASPECT RATIO;
CRYSTAL IMPURITIES;
LIQUID PHASE EPITAXY;
SEMICONDUCTING SILICON;
SEMICONDUCTING TELLURIUM;
SEMICONDUCTOR GROWTH;
TIN;
EPITAXIAL LATERAL OVERGROWTH (ELO);
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0032640229
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/14/5/316 Document Type: Article |
Times cited : (22)
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References (21)
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