Homo-epitaxial and selective area growth of 4H and 6H silicon carbide using a resistively heated vertical reactor

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 173-178

  Eshun, Ebenezer ^a   Taylor, Crawford ^a   Spencer, M G ^a   Kornegay, Kevin ^b   Ferguson, Ian ^c   Gurray, Alex ^c   Stall, Rick ^c  

^a HOWARD UNIVERSITY   (United States)

^b Cornell University   (United States)

^c EMCORE Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HEATING; HIGH TEMPERATURE OPERATIONS; HYDROGEN BONDS; MASKS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

CAPACITANCE TECHNIQUE; GRAPHITE MASK; HOMOEPITAXIAL GROWTH; RESISTIVE HEATING; RESISTIVELY HEATED VERTICAL REACTOR; SELECTIVE AREA GROWTH;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033322577     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-173     Document Type: Conference Paper

References (7)

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3. th Conference of Solid State Devices and Materials, edited by S. Furukawa, (Tokyo, Japan 1987) pp. 227
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5. H. Matsunami et al., Mater. Res. Soc. Symp. Proc. 162, 397 (1990)
6. H. Matsunami et al., in Amorphous and Crystalline Silicon Carbide, edited by G.L Harris and C.Y.W Yang, (Springer Proceedings in Physics 1989, Vol.34) pp. 34-39
7. Chris Thomas et al., Annealing of Ion Implantation Damage in SiC using a Graphite Mask, presented at the 1999 MRS Spring Meeting, San Francisco, CA, 1999 (unpublished).