SiC power devices - An overview

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 243-254

  Agarwal, Anant ^a   Das, Mrinal ^a   Krishnaswami, Sumithra ^a   Palmour, John ^a   Richmond, James ^a   Ryu, Sei Hyung ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GATES (TRANSISTOR); INSULATED GATE BIPOLAR TRANSISTORS; MOSFET DEVICES; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SURFACE ROUGHNESS;

BIPOLAR JUNCTION TRANSISTORS (BJT); CURRENT GAIN; JUNCTION BARRIER SCHOTTKY (JBS) DIODES; VOLTAGE INSTABILITY;

SILICON CARBIDE;

EID: 12844250168     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-815-j1.1     Document Type: Conference Paper

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