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Materials Research Society Symposium - Proceedings
Volumn 622, Issue , 2000, Pages T631-T636
Pendeo epitaxy of 3c-sic on si substrates
(6)
Carter, G E
a
Zheleva, T
b
Melnychuck, G
a
Geil, B
b
Jones, K
b
Saddow, S E
a
a
Emerging Materials Research Laboratory
(
United States
)
b
U S ARMY RESEARCH LABORATORY
(
United States
)
Author keywords
[No Author keywords available]
Indexed keywords
COALESCENCE; CRYSTAL ORIENTATION; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); NUCLEATION; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;
DIELECTRIC BUFFER LAYERS; LATERAL EPITAXIAL OVERGROWTH (LEO);
SILICON CARBIDE;
EID
:
0034428585
PISSN
:
02729172
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1557/proc-622-t6.3.1
Document Type
:
Article
Times cited : (
1
)
References (
12
)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
