Process-property relationships between silicon selective epitaxial growth ambients and degradation of insulators

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 6, 1996, Pages 3224-3227

  Gaynor, W ^a,b   Takoudis, C G ^a   Neudeck, G W ^a,b  

^a PURDUE UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030504675     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580217     Document Type: Article

References (12)

1. G. W. Neudeck, P. J. Schubert, J. L. Glenn, J. A. Friedrich, W. A. Klaasen, R. P. Zingg, and J. P. Denton J. Electron. Mater. 19, 1111 (1990).
2. R. Bashir, S. Venkatesan, G. W. Neudeck, and J. P. Denton, IEEE Electron. Device Lett. 13, 392 (1992).
3. A. Tasch, SRC Contract Review (University of Texas, Austin, 1991), Vol. 28.
4. L. Jastrzebski, J. Cryst. Growth 63, 493 (1983).
5. J. A. Friedrich and G. W. Neudeck, J. Appl. Phys. 64, 3538 (1988).
6. R. Bashir et al., IEEE Electron. Device Lett. 16, 382 (1995).
7. W. H. Gaynor, Research thesis, School of Chemical Engineering, Purdue University (1989).
8. J.-C. Lou, C. Galewski, and W. G. Oldham, Appl. Phys. Lett. 58, 59 (1991).
9. C. Galewski and W. G. Oldham, J. Electrochem. Soc. 139, 543 (1992).
10. S. Gordon and B. J. McBride, Technical Report. No. SP-273, NASA, NASA Lewis Research Center (1971).
11. I.-M. R. Lee and C. G. Takoudis, J. Electrochem. Soc. 143, 1719 (1996).
12. I.-M. R. Lee, M.S. thesis, School of Chemical Engineering, Purdue University (1994).