Selective epitaxial growth of 3C-SiC on patterned Si using hexamethyldisilane by APCVD

Journal of Crystal Growth

Volumn 257, Issue 3-4, 2003, Pages 245-254

  Teker, K ^a,b  

^a Case Western Reserve University   (United States)

^b IQE INC   (United States)

Author keywords

A1. Optical microscopy; A1. X ray diffraction; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B1. Silicon carbide

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); SILANES; SILICON CARBIDE; X RAY DIFFRACTION;

GAS MIXTURES;

EPITAXIAL GROWTH;

EID: 0041380935     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01464-7     Document Type: Article

References (23)

1. Gale R.P., McClelland R.W., Fan C.C., Bozzler C.O. Appl. Phys. Lett. 41:1982;545.
2. Vohl P., Bozzler C.O., McClelland R.W., Chu A., Strauss A.J. J. Crystal Growth. 56:1982;410.
3. Nam O.-H., Bremser M.D., Zheleva T.S., Davis R.F. Appl. Phys. Lett. 71:1997;2638.
4. Ohshita Y., Ishitani A. J. Appl. Phys. 66:1989;4535.
5. Ohshita Y. Appl. Phys. Lett. 57:1990;605.
6. Nishino S., Takahashi K., Ishida H., Saraie J. Harris G.L., Spencer M.G., Yang C.Y. Amorphous and Crystalline Silicon Carbide III. 1992;295 Springer, Berlin.
7. Nishino S., Tanaka H., Takahashi K., Saraie J. Tang C.T., Rahman M.M., Harris G.L. Amorphous and Crystalline Silicon Carbide IV. 1992;411 Springer, Berlin.
8. Edgar J.H., Gao Y., Chaudhari J., Cheema S., asalnuova S.A.C., Yip P.W., Sidorov M.V. J. Appl. Phys. 84:1998;201.
9. Jacob C., Hong M., Chung J., Pirouz P., Nishino S. Mater. Sci. Forum. 338-342:2000;249.
10. Eickhoff M., Moller H., Rapp M., Kroetz G. Thin Solid Films. 345:1999;197.
11. Saddow S.E., Carter G., Geil B., Zheleva T., Melynchuck G., Okhyusen M.E., Mazzola M.S., Vispute R.D., Derenge M., Ervin M., Jones K. Mater. Sci. Forum. 338-342:2000;245.
12. Nelson W.E., Halden F.A., Rosengreen A. J. Appl. Phys. 37(1):1966;333.
13. Gaynor W., Takoudis C.G., Nuedeck G.W. J. Vac. Sci. Technol. A. 14:1996;3224.
14. Liehr M., Lewis J.E., Rubloff G.W. J. Vac. Sci. Technol. A. 5:1987;1559.
15. Ferro G., Planes N., Chaussende D., Monteil Y., Stoemenos J., Camassel J. Mater. Sci. Eng. B. 61-62:1999;586.
16. Rathman D.D., Silversmith D.J., Burns J.A. J. Electrochem. Soc. 129:1982;2303.
17. Jastrzebski L., Corboy J.F., Pagliaro R. J. Electrochem. Soc. 129:1982;2645.
18. Goulding M.R. Mater. Sci. Eng. B. 17:1993;47.
19. Mogab C.J., Leamy H.J. Appl. Phys. Lett. 45:1974;1075.
20. Liaw H.P., Davis R.F. J. Electrochem. Soc. 132:1988;642.
21. Li J.P., Steckl A.J. J. Electrochem. Soc. 142:1995;634.
22. Veprek S., Kunstmann T., Volm D., Meyer B.K. J. Vac. Sci. Technol. A. 15(1):1997;10.
23. Teker K., Jacob C., Chung J., Hong M.H. Thin Solid Films. 371:2000;53.