Spatially resolved photoluminescence of laterally overgrown InP on InP-coated Si substrates

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 622-629

  Naritsuka, Shigeya ^a   Nishinaga, Tatau ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Crystalline quality improvement; Dislocation free; Epitaxial lateral overgrowth; Heteroepitaxy; Indium phosphide; Liquid phase epitaxy; Silicon; Spatial resolved photoluminescence; Stress free

Indexed keywords

COATED MATERIALS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

EPITAXIAL LATERAL OVERGROWTH (ELO); FULL WIDTH HALF MAXIMUM (FWHM);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031547367     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00046-8     Document Type: Article

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